CHEN Yi-chuan;HU Yue-hui;CHEN Jun;CHEN Xin-hua;MA De-fu
. 2013, 44(10): 1497-1501.
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This paper investigated the properties of ZnO:H thin films. We found that hydrogen played an important role on structural and properties of ZnO:H thin films. With the changing of H doping amount, the effects of H doping manifested as passivating vacancy defects, shallow donor doping and etching action. (1) When the doping concentration R (R=H2/ (H2+Ar)≤0.02) was low, samples grown along the (002) preferential orientation; In this condition, H atoms did mainly play a role of shallow donor doping of passivating oxygen vacancies and substituting zinc ion, so the unit cell volumes became smaller and the crystallinity of ZnO:H thin films increased; In addition, H atoms passivated oxygen vacancies, which made the band tails became narrower, so the optical band gap became wider; We could observe the grains size became bigger and homogeneous distribution on the rough films surface from the SEM figure; Besides, the resistivity of thin film decreased, which was mainly attributed to the electron mobility increased from the crystallinity increasing and the electron concentration increased from the shallow donor doping. (2) When the doping concentration was more than 0.04 (R≥0.04), the (002) peak of XRD quenched, the unit cell volumes became bigger and the quality of crystallization decreased. In the FT-IR spectra, which were observed an absorption band at 3400-3900 cm-1. It exhibited to the typical O-H bonding local vibrational modes (LVM) absorption band. Owing to the charges unbalance was caused by polar molecular clusters (hydroxy), which produced oxygen vacancies and increased the electron concentration, and result in the decreasing of the film resistivity in the high doping concentration. In this condition, the optical band gap became narrower, which caused by the H etching action.