Yan Yang;Lan-Jian ZHUGE ;;;;WU Xuemei
. 2013, 44(21): 1-0.
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We demonstrate that single crystal ZnO nanowires with high density and large length/diameter ratio are successfully grown on Si (100) substrates at a series of growth temperatures, via simple and catalyst-free thermal evaporation. The structural and photoluminescence properties of the resulting samples are characterized using x-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), transmission electron microscope (TEM), and photoluminescence (PL), respectively. The XRD and TEM investigations indicate that the resulting ZnO nanowires are single crystalline grown along the c-axis direction in preference with the hexagonal wurtzite phase; SEM results show that the growth temperature has an effect on the morphology and the length/diameter ratio of the resulting ZnO nanowires. 700℃ is believed to be the optimized growth temperature among the series of temperatures, and the ZnO nanowire of which possesses the largest length/diameter ratio estimated about 300 (15um /50 nm). Moreover, the room temperature PL measurements for the as-prepared ZnO nanowires exhibit two emission bands including a sharp and strong UV emission and a broad and week blue emission. The VS mechanism based deposition method in our experiment can be applied to large-scale manufacture of high-purity single crystal ZnO nanowires.