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. 2014, 45(13): 15-0.
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Transparent oxide thin film transistor has attracted much attention due to advantages of a high field effect mobility, excellent uniformity, and the compatibility with flexible substrate compared to conventional amorphous and polycrystalline silicon thin film transistors, that can be widely used in active flat panel display areas, especially organic light emitting diode display driver back plane. Solution processed thin film transistor does not require high vacuum environment, low cost, simple process, easy to control compound ingredients, also can achieve uniform molecular level doped quantitative, meet the demand for new technology research and development. The research was concentrated in the film composition and process temperature on device performance. The all solution processed fabrication and low temperature preparation based on flexible substrate have also made good progress, which provide a reliable and low cost technology for the future flat display industry, However, it still has relative high fabrication temperature and poor stability. This paper summarizes the remarkable work、research direction and progress in the field.