The structure and passivation effect for the c-Si wafer of a-Si:H films with different processing parameters by HWCVD

The structure and passivation effect for the c-Si wafer of a-Si:H films with different processing parameters by HWCVD

Yu-ping He

Jorunal of Functional Materials ›› 2015, Vol. 46 ›› Issue (22) : 24-0.

The structure and passivation effect for the c-Si wafer of a-Si:H films with different processing parameters by HWCVD

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2015, 46(22): 24-0

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉