Effect of C-induced layer temperature on the sputtering growth of Ge/Si quantum dots

Effect of C-induced layer temperature on the sputtering growth of Ge/Si quantum dots

;;;;Yu YANG

Journal of Functional Materials ›› 2014, Vol. 45 ›› Issue (05) : 7-0.

Effect of C-induced layer temperature on the sputtering growth of Ge/Si quantum dots

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