Properties of GaN Film Grown by Hydride Vapor Phase Epitaxy

Properties of GaN Film Grown by Hydride Vapor Phase Epitaxy

;;;

PDF(1318 KB)

Journal of Functional Materials ›› 2013, Vol. 44 ›› Issue (23) : 19-0.

Properties of GaN Film Grown by Hydride Vapor Phase Epitaxy

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2013, 44(23): 19-0

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1318 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉