Study of electronic structure of interstitial Ni-doping in silicon nanowires

Study of electronic structure of interstitial Ni-doping in silicon nanowires

LIANG Weihua;WANG Xiuli;DING Xuecheng

Journal of Functional Materials ›› 2011, Vol. 42 ›› Issue (07) : 1207-1210.

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Study of electronic structure of interstitial Ni-doping in silicon nanowires

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