Magnetoelectric properties of V doped LiZnP new diluted magnetic semiconductor with large half metallic energy gap

doi:10.3969/j.issn.1001-9731.2019.12.030

Jorunal of Functional Materials ›› 2019, Vol. 50 ›› Issue (12) : 12183-12189. DOI: 10.3969/j.issn.1001-9731.2019.12.030

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Magnetoelectric properties of V doped LiZnP new diluted magnetic semiconductor with large half metallic energy gap

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 50(12): 12183-12189 https://doi.org/10.3969/j.issn.1001-9731.2019.12.030

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2019-06-22	2019-12-30
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2019-12-30

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