Preparation and heat dissipation research of nickel-based graphene films in the insulated gate bipolar transistor

doi:10.3969/j.issn.1001-9731.2019.09.028

Journal of Functional Materials ›› 2019, Vol. 50 ›› Issue (9) : 9170-09173. DOI: 10.3969/j.issn.1001-9731.2019.09.028

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Preparation and heat dissipation research of nickel-based graphene films in the insulated gate bipolar transistor

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 50(9): 9170-09173 https://doi.org/10.3969/j.issn.1001-9731.2019.09.028

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Received	Revised	Published
2019-02-20	2019-04-13	2019-09-30
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2019-09-30

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