Effect of substrate temperature and annealing on InAs quantum dots grown by droplet epitaxy

doi:10.3969/j.issn.1001-9731.2018.03.035

Journal of Functional Materials ›› 2018, Vol. 49 ›› Issue (3) : 3203-3206. DOI: 10.3969/j.issn.1001-9731.2018.03.035

Process & Technology

Effect of substrate temperature and annealing on InAs quantum dots grown by droplet epitaxy

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2018, 49(3): 3203-3206 https://doi.org/10.3969/j.issn.1001-9731.2018.03.035

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2017-08-29	2018-03-31
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2018-03-31

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