Light emitting formation in C-doped SiO<sub>2</sub> after Xe/Pb-ion irradiations

doi:10.3969/j.issn.1001-9731.2018.01.011

Journal of Functional Materials ›› 2018, Vol. 49 ›› Issue (1) : 1055-1058. DOI: 10.3969/j.issn.1001-9731.2018.01.011

Research & Development

Light emitting formation in C-doped SiO₂ after Xe/Pb-ion irradiations

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

Abstract

Key words

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2018, 49(1): 1055-1058 https://doi.org/10.3969/j.issn.1001-9731.2018.01.011

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

Funding

RIGHTS & PERMISSIONS

PDF(2033 KB)

Accesses

Citation

Detail

Sections

Recommended

Received	Published
2017-12-09	2018-01-30
Issue Date
2018-01-30

Please choose a citation manager

Content to export

HeighLight

Abstract

Key words

Cite this article

{{custom_sec.title}}

{{custom_sec.title}}

References

References

{{custom_fnGroup.title_en}}

Footnotes

{{custom_ack.title_en}}

Funding

RIGHTS & PERMISSIONS