MBE growth and STM analysis of InGaAs quantum dots with As intermittent interruption

doi:10.3969/j.issn.1001-9731.2017.05.005

Jorunal of Functional Materials ›› 2017, Vol. 48 ›› Issue (5) : 5023-5027. DOI: 10.3969/j.issn.1001-9731.2017.05.005

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MBE growth and STM analysis of InGaAs quantum dots with As intermittent interruption

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2017, 48(5): 5023-5027 https://doi.org/10.3969/j.issn.1001-9731.2017.05.005

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2016-07-15	2017-05-30
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2017-05-30

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