MOCVD生长温度控制p型InGaN形貌和电学特性提高LED光功率

韩军;邢艳辉;邓军

Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power

HAN Jun;XING Yanhui;DENG Jun

. 2011, (07): 1227 -1229 .