Process & Technology
WU Baoqi, FU Chen, LIU Qiying, SHI Guohua, WANG Zhihao, ZHAO Hongli
To improve the optical, electrical, and low-radiation performance of FTO thin films, in this paper, tantalum doped FTO(TFTO) films were successfully prepared on soda-calcium glass by aerosol assisted chemical vapor deposition(AACVD). The monobutyl tin chloride (MBTC) was used as tin source, ammonium fluoride (NH4F) as fluorine source, methanol as solvent, tantalum pentachloride (TaCl5) as tantalum source and sodium-calcium glass as base. The phase composition, micro-morphology, optical properties, electrical properties, and low radiation properties of the films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), a spectrophotometer, and a Hall effect tester. The results show that TFTO (SnO2:F, Ta) has a tetragonal rutile structure and is an N-type semiconductor. When Ta/Sn atomic ratio is 1%, the visible transmittance T is 74.18%, the resistivity ρ is 2.78×10-4 Ω·cm, the carrier concentration n is 1.44×1021/cm3, the mobility μ is 18.73 cm2/(V·s), the infrared reflectance RIR is 94%, and the emissivity ε is 0.12. Tantalum doping can effectively improve the electrical properties, carrier concentration and infrared reflectance of FTO films, and has a low effect on visible transmittance.