具有大半金属能隙的V掺杂LiZnP新型稀磁半导体的磁电性质
贾倩, 杜颖妍, 杜成旭, 陈婷, 刘焦, 于越, 张恒源, 刘明, 毋志民
Magnetoelectric properties of V doped LiZnP new diluted magnetic semiconductor with large half metallic energy gap
JIA Qian, DU Yingyan, DU Chengxu, CHEN Ting, LIU Jiao, YU Yue, ZHANG Hengyuan, LIU Ming, WU Zhimin
功能材料
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2019, (12): 12183
-12189
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DOI: 10.3969/j.issn.1001-9731.2019.12.030
