Effects of bias-induced stress on AlInN/GaN high electron mobility transistors

Effects of bias-induced stress on AlInN/GaN high electron mobility transistors

Journal of Functional Materials ›› 2015, Vol. 46 ›› Issue (01) : 16-0.

Effects of bias-induced stress on AlInN/GaN high electron mobility transistors

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2015, 46(01): 16-0

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉