ZHANG Junmin,WEN Ming,TAN Zhilong,WANG Chuanjun,SHEN Yue,
YI Wei,GUAN Weiming, LI Yanqiong
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Because of low resistance coefficient, good thermal stability and oxidation resistance,WTi alloy has been successfully applied to the diffusion barrier layer of semiconductor device.So far, The target used in China semiconductor industry is mostly imported from abroad. Therefore, by studying the relationship between preparation process and the performance of target, to get high density, high purity titanium, and less β1(Ti,W) phase WTi alloy.W and Ti mixed powders with different particle sizes were obtained by the planetary ball milling. The WTi10 alloy was prepared by vacuum hot pressing. X ray diffraction (XRD), scanning electron microscope (SEM) were used to analyze morphology of the alloy and the particle size of the composite powder and the structure. The density and impurity cotent were analyzed by the method of drainage method and ICP test. The results showed that in the temperature 1 200 ℃, 30 MPa pressure vacuum hot pressing conditions, the WTi alloy have been formed body centered cubic beta phase WTi solid solution. The powder mixed time have no effect on the peak position and peak strength of WTi solid solution. But powder mixed time affect alloy microstructure morphology greatly, longer duration of mixed powder, rich titanium phase β1 showed a trend of increase after the first reduce,mixed powder samples of 3 hours get rich Ti solid solution phase area at least, optimal performance, the density of alloy achieves 99.48% of theoretical density, the purity is more than 99.97%. WTi alloy prepared by this method can be used for the preparation of the diffusion barrier layer by magnetron sputtering. The above research provided basic data for the research of vacuum hot-pressed magnetic WTi target.