晶体硅中深浅能级掺杂电子结构差异的第一性原理研究
张洪嘉, 蔡宏政, 卢建光, 张晨光, 张立峰, 李亚琼
First-principles investigation of electronic structure differences between deep-level and shallow-level dopants in crystalline silicon
ZHANG Hongjia, CAI Hongzheng, LU Jianguang, ZHANG Chenguang, ZHANG Lifeng, LI Yaqiong
功能材料
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2026, (8): 162
-167
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DOI: 10.3969/j.issn.1001-9731.2026.08.019
