石墨衬底上具有(220)/(400)择优取向多晶硅薄膜的制备及性质
辛雅焜;陈诺夫
石墨衬底上具有(220)/(400)择优取向多晶硅薄膜的制备及性质
Preparation and properties of polycrystalline silicon thin films with (220) and (400) preferred orientation on graphite substrate
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